Tensile strained nfet and compressively strained pfet formed on strain relaxed buffer

ABSTRACT

A tensile strained silicon layer and a compressively strained silicon germanium layer are formed on a strain relaxed silicon germanium buffer layer substrate. A relaxed silicon layer is formed on the substrate and the compressively strained silicon germanium layer is formed on the relaxed silicon layer. The compressively strained silicon germanium layer can accordingly have approximately the same concentration of germanium as the underlying strain relaxed buffer layer substrate, which facilitates gate integration. The tensile strained silicon layer and the compressively strained silicon germanium layer can be configured as fins used in the fabrication of FinFET devices. The relaxed silicon layer and a silicon germanium layer underlying the tensile silicon layer can be doped in situ to provide punch through stop regions adjoining the fins.

BACKGROUND

The present disclosure relates generally to the electrical, electronicand computer arts and, more particularly, to nFET and pFET devicesformed on strain relaxed buffers and the fabrication of such devices.

Various semiconductor devices benefit from the use of strain-relaxedbuffer layers such as those comprising fully relaxed silicon germanium(SiGe). Strain-relaxed buffers (SRBs) can act as virtual substrates onwhich to grow semiconductor layers having lattice constants differentfrom those of the original substrates, for example silicon (001). TheSRBs can support strained or relaxed layers. The SRBs should be relaxedto help avoid the generation of crystal imperfections such as threadingdislocations in the layer(s) grown thereon. Such defects are known tohave deleterious effects on the properties of electronic andoptoelectronic devices. The crystalline quality of a relaxed SiGe layercan be improved by, for example, growing compositionally graded bufferlayers (GBL) with a thickness of up to several micrometers. Gradedbuffer layers are grown with increasing germanium concentration as thethickness increases. Molecular beam epitaxy (MBE) is one suitabletechnique for growing graded SiGe buffer layers. Other techniques areknown to the art. As the surface roughness of buffer layers obtainedusing such a technique may not be optimal, chemical mechanical polishing(CMP) may be necessary. Another technique used for fabricating a relaxedSi_(1−x)Ge_(x) buffer having reduced levels of threading dislocationsincludes epitaxially depositing a pseudomorphic or nearly pseudomorphicSi_(1−x)Ge_(x) layer on the surface of a silicon substrate, ionimplanting atoms of a light element into the substrate, and annealingthe substrate at a temperature above 650° C. Reduction of threadingdislocations (TD) density is obtained by plastic relaxation, which bydefinition works based on dislocation generation to relax the latticemismatched crystals.

Exemplary devices that may be formed using strain-relaxed silicongermanium layers include fin-type field-effect transistors (FinFETs),metal oxide field effect transistors (MOSFETs), and strainedsilicon-based complementary metal oxide semiconductor (CMOS) devices.Some nFET devices require silicon layers under tensile strain to enhanceelectron mobility. Other devices or elements such as pFET devicesrequire semiconductor layers under compressive strain. The amount ofstrain on a silicon or silicon germanium layer grown epitaxially on arelaxed Si_(1−x)Ge_(x) layer can be engineered by providing an atomicpercentage of germanium within a selected range. A current techniqueinvolves the use of SiGe alloys having, for example, twenty-five percent(25%) germanium in the buffer layer (Si_(0.75)Ge_(0.25)) and fiftypercent germanium (Si_(0.5)Ge_(0.5)) in the adjoining pFET layer. Gatestack fabrication on SiGe alloys containing twenty-five percent (25%)germanium is well understood, but formation of a reliable gate stack onSiGe alloys having higher germanium contents can be challenging. Strainrelaxed buffer layers allow dual channel materials to be provided on thesame substrate employed to fabricate integrated circuits including, forexample, FinFET devices.

FIGS. 1-4 schematically illustrate an exemplary sequence of steps forforming a finned structure useful for forming FinFET devices on a bulksilicon substrate. FIG. 1 shows a structure 20 including a bulk siliconsubstrate 22 and a strain relaxed buffer (SRB) layer 24 on thesubstrate. The SRB layer is a silicon germanium layer, for example(Si_(0.75)Ge_(0.25)). The SRB layer is subjected to ion implantation toform a p-well region 26 in the nFET region of the structure and ann-well region 28 in the pFET region of the structure 20. Boron ions 27are implanted to form the p-well region 26 while the pFET region ismasked. Arsenic ions 29 are used to form the n-well region 28 while thenFET region is masked. As known in the art, punch through stop (PTS)implantation reduces the punch through current in FinFET devices formedusing bulk silicon substrates. As shown in FIG. 2, a silicon layer 30 isgrown epitaxially on the p-well in the nFET region of the structurewhile the pFET region is masked and a silicon germanium layer 31 isgrown on the n-well region 28 while the nFET region is masked. Thesilicon germanium layer may have the composition Si_(0.60)Ge_(0.40) andwill accordingly be under compressive strain when grown on an SRB layerhaving a lower percentage of germanium. The silicon layer 30 is undertensile strain. Fins 32, 33 are formed from the silicon and silicongermanium layers 30, 31, respectively. Fins having relatively smallwidths, for example six to ten nanometers (6-l0 nm), can be formed usingsidewall image transfer (SIT) processes. Photolithographic processes canbe employed for forming fins having relatively large widths. Portions ofthe p-well and n-well may be removed during fin formation, asschematically illustrated, leaving PTS regions at the bottom portions ofthe fins. While shown as having vertical side walls, the fins mayinstead have generally triangular configurations with wider bases thantop portions. The spaces between fins are partially filled with adielectric material such as silicon dioxide. The deposited dielectricmaterial is etched back to form a dielectric layer 34 of desiredthickness. The heights of the fins are determined by the thickness ofthe dielectric layer 34, as schematically illustrated in FIG. 4.

Conventional process flows relating to the fabrication of finnedsemiconductor devices includes steps such as ion implantation andannealing. Problems may arise from damage caused by ion implantation inthe SiGe SRB, leading to defect nucleation and defect movement. Suchdefects 35 are schematically illustrated in FIG. 4. (The siliconsubstrate beneath the SRB layer is not shown in FIGS. 2-4 to simplifythe drawings.) Enhanced diffusion of n-doped species used to form thePTS region in the pFET region of the structure increases the difficultyin forming gate stacks on the silicon germanium fins 33. Arsenic has amuch higher diffusion rate in silicon germanium than in silicon, leadingto unwanted diffusion into the channel regions of the silicon germaniumfins 33. Such diffusion is schematically illustrated in FIG. 4.Phosphorus, while having a slower diffusion rate than arsenic, likewisetends to diffuse upward from the PTS region into the channel regions ofthe silicon germanium fins 33 and laterally into the adjoining p-wellregion. The formation of reliable gate stacks in the pFET region is morechallenging when the fins 33 have been subjected to arsenic orphosphorus diffusion.

Fin-type field-effect transistors (FinFETs) as discussed above havethree-dimensional, non-planar configurations including fin-likestructures extending above substrates. The substrates may includesemiconductor on insulator substrates or bulk semiconductor substrates.In bulk FinFETs, active fin heights are set by oxide thickness andetched fin height. The gates of FinFETs can be formed using a“gate-first” process wherein a gate stack and spacers are formed priorto selective epitaxial growth wherein source and drain regions areenlarged. A “gate-last” process may alternatively be employed whereinthe source/drain regions are formed immediately following finpatterning. Gate-last procedures involve the fabrication of a dummy gatefollowed by fabrication of other transistor elements and replacement ofthe dummy gate with actual gate materials.

BRIEF SUMMARY

Techniques are provided for providing structures including strainedsilicon and silicon germanium on a strain relaxed buffer layersubstrate.

In one aspect, an exemplary fabrication method includes obtaining astructure including a substrate and a strain relaxed silicon germaniumbuffer layer on the substrate, forming an epitaxial silicon germaniumlayer on a first region of the strain relaxed buffer layer, and forminga tensile strained layer comprising silicon directly on the epitaxialsilicon germanium layer. A relaxed layer comprising silicon is formed ona second region of the strain relaxed buffer layer and a compressivelystrained silicon germanium layer is formed directly on the relaxedlayer.

In another aspect, an exemplary semiconductor structure includes astrain relaxed silicon germanium layer, a p-doped silicon germaniumlayer on a first region of the strain relaxed buffer layer, and arelaxed, n-doped layer comprising silicon on a second region of thestrain relaxed buffer layer. A tensile strained layer comprising siliconis directly on the p-doped silicon germanium layer and a compressivelystrained silicon germanium layer is directly on the relaxed, n-dopedlayer. The tensile strained layer and the compressively strained silicongermanium layers are electrically isolated from each other.

Techniques and structures as disclosed herein can provide substantialbeneficial technical effects. By way of example only and withoutlimitation, one or more embodiments may provide one or more of thefollowing advantages:

-   -   Improving performance of electronic devices formed on strain        relaxed buffer layers;    -   Facilitating reliable gate stack integration;    -   Avoiding unwanted diffusion of dopants into fin channel regions.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following drawings are presented by way of example only and withoutlimitation, wherein like reference numerals (when used) indicatecorresponding elements throughout the several views, and wherein:

FIG. 1 is a schematic cross-sectional view showing ion implantation of astrain relaxed buffer layer formed on a bulk silicon substrate inaccordance with prior art techniques;

FIG. 2 is a cross-sectional view thereof schematically illustratingformation of silicon and silicon germanium layers on the implantedstrain relaxed buffer layer, in accordance with prior art techniques;

FIG. 3 is a further schematic, cross-sectional view thereof showingformation of semiconductor fins from the silicon and silicon germaniumlayers, in accordance with prior art techniques;

FIG. 4 is a cross-sectional view showing the structure of FIG. 3following deposition of a dielectric layer and annealing, in accordancewith prior art techniques;

FIG. 5 is a schematic, cross-sectional view showing a semiconductorstructure including a strain relaxed Si_(1−x)Ge_(x) strain relaxedbuffer layer on a bulk silicon substrate;

FIG. 6 is a schematic, cross-sectional view thereof showing theformation of active regions on the semiconductor structure shown in FIG.5;

FIG. 7 is a schematic, cross-sectional view showing the formation of ahard mask on the pFET region of the semiconductor structure shown inFIG. 6;

FIG. 8 is a schematic, cross-sectional view showing the formation of ap-doped silicon germanium layer and a silicon layer in a recessedportion of the nFET region of the semiconductor structure shown in FIG.7;

FIG. 9 is a schematic, cross-sectional view showing the formation of ahard mask on the silicon layer of the semiconductor structure shown inFIG. 8;

FIG. 10 is a schematic, cross-sectional view showing the formation of ann-doped silicon layer and a silicon germanium layer in a recessedportion of the pFET region of the semiconductor structure shown in FIG.9, and

FIG. 11 is a schematic, cross-sectional view showing the formation ofsilicon and silicon germanium fins in the nFET and pFET regions of thesemiconductor structure shown in FIG. 10.

It is to be appreciated that elements in the figures are illustrated forsimplicity and clarity. Common but well-understood elements that may beuseful or necessary in a commercially feasible embodiment may not beshown in order to facilitate a less hindered view of the illustratedembodiments.

DETAILED DESCRIPTION

Principles of the present disclosure will be described herein in thecontext of illustrative embodiments. It is to be appreciated, however,that the specific embodiments and/or methods illustratively shown anddescribed herein are to be considered exemplary as opposed to limiting.Moreover, it will become apparent to those skilled in the art given theteachings herein that numerous modifications can be made to theembodiments shown that are within the scope of the claims. That is, nolimitations with respect to the embodiments shown and described hereinare intended or should be inferred.

One or more embodiments provide a structure wherein a strain relaxedsilicon germanium buffer is provided for facilitating subsequent growthof high performance CMOS devices. Strained silicon germanium fins can beformed on the buffer during the fabrication of pFET devices whilesubstantially avoiding unwanted dopant diffusion from punch through stopregions using techniques as described herein.

FIGS. 4-11 depict an exemplary process flow for obtaining a finnedsemiconductor structure usable for the fabrication of FinFET devices.The structure 40 shown in FIG. 4 includes a silicon substrate 42 havinga first Si_(1−x)Ge_(x) layer 44 thereon. In an exemplary embodiment,x=0.25 in at least an upper portion of the Si_(1−x)Ge_(x) layer 44. Asmaller germanium concentration is present in the vicinity of thesurface of the substrate 42 on which the Si_(1−x)Ge_(x) layer is grown.The substrate is a bulk silicon substrate in one or more exemplaryembodiments that is essentially undoped and substantiallymonocrystalline. The exemplary structure 40 shown in FIG. 4 is obtainedby growing a substantially undoped, pseudomorphic SiGe layer 44 on thesubstrate layer 22. The layer is formed using any epitaxial growingprocess that allows the formation of SiGe layers having the desiredpseudomorphic characteristics. In one or more embodiments, low pressurechemical vapor deposition (LPCVD) is employed to grow the SiGe layer 44.Such deposition can be conducted at 10-80 torr and between 600-1,000° C.In some alternative embodiments, an ultra-high-vacuum chemical vapordeposition (UHV-CVD) process may be employed to grow the SiGe layerdirectly on the substrate surface. For example, a UHV-CVD process isperformed at low temperature (e.g. less than 550° C.) on a cleansubstrate layer surface in some embodiments. Other exemplary growthprocesses include molecular beam epitaxy (MBE), chemical beam epitaxy(CBE), chemical vapor deposition (CVD), and plasma-enhanced chemicalvapor deposition (PECVD). In some embodiments, the ratio of silicon andgermanium precursors (e.g. silane and germane) is maintained constantduring one or more stages of epitaxial deposition to provide asubstantially uniform ratio of silicon to germanium in one or moreportions of the first SiGe layer 44. A step graded SiGe layer may beprovided using such a deposition technique. Alternatively, the SiGelayer 44 can be formed as a continuously graded layer having increasinggermanium content from its interface with the substrate 42 towards thetop surface thereof. Defects in the SiGe originate from the latticemismatch between the silicon substrate and the SiGe grown thereon. Bygrowing relatively thick SiGe layer(s), the defect density at thesurface of the SiGe layer is reduced. Defect density at the surface ofthe SiGe layer 44 is reduced as a function of thickness. Other ways ofreducing the defect density in graded buffer layers are also known tothose of skill in the art. In one or more exemplary embodiments, theSi_(1−x)Ge_(x) layer 44 has a value of x between 0.20 and 0.30 in theportion that will later adjoin n-well and p-well layers grown thereon.The thickness of the first Si_(1−x)Ge_(x) layer 44 is between two andten microns in some exemplary embodiments. For example, in oneembodiment the first Si_(1−x)Ge_(x) layer 44 has an overall thickness offive microns, at least the top two microns of which include the targetedgermanium concentration (x=0.20-0.30).

Referring to FIG. 6, shallow trench isolation (STI) regions 46 areformed in the strain relaxed, Si_(1−x)Ge_(x) (SRB) layer 44. Trenchesare formed in the SRB layer 44 by reactive ion etching. RIE etching ofsilicon germanium alloys can be conducted using HBr plasma, whichprovides highly directional anisotropic etching. The trenches areshallower in depth than the thickness of the SRB layer 44 andaccordingly have bottom surfaces above the top surface of the substrate42. Patterning techniques familiar to those skilled in the artfacilitate trench formation and subsequent filling of the trenches withone or more electrically insulating material(s) such as silicon dioxide.The filling process can be done by any suitable deposition process(e.g., by CVD, spin-on) followed by removal of the oxide from areasother than the STI regions. CMP (chemical mechanical planarization) tothe top of the strain relaxed SRB layer 44 or an etch-back process canbe employed to remove excess oxide from the structure. The shallowtrench isolation (STI) process provides electrically isolated activeareas of the structure regions such as the nFET and pFET regionsdesignated in FIGS. 6-11. The region designated as nFET is intended forthe later formation of nFET devices. As known in the art, nFET devicesare characterized by n+ source/drain regions while pFET devices have p+source/drain regions. The pFET region is intended for pFET devices. Theformation of STI regions 46 is preferably though not necessarilyconducted prior to the steps described below with respect to FIGS. 7-10.

As schematically illustrated in FIG. 7, a hard mask 48 is provided onthe pFET region of the SRB layer 44. A nitride (Si₃N₄) layer is employedas the hard mask in some exemplary embodiments. Such a mask can bedeposited on the SRB layer 44 using conventional deposition techniquessuch as spin-on coating, chemical vapor deposition (CVD),plasma-assisted CVD, or other known techniques. Conventional processesare further employed, such as applying and patterning a resist, etching,and removing resist, to remove a portion of the hard mask 48 from thenFET region of the structure. The top surface of the SRB layer 44 isaccordingly exposed in the nFET region while the pFET region isprotected by the mask 48. Hot phosphoric acid may be used to remove theselected portion of the hard mask from the nFET region, resulting in thestructure illustrated in FIG. 7.

Referring now to FIG. 8, a first recess is formed in the nFET region ofthe SRB layer 44. Silicon germanium can be etched in conventionalfluorine, bromine or chlorine-based low pressure plasmas. The formationof recesses in silicon germanium using reactive ion etch (RIE) processesis known to the art, and any suitable technique may be employed. Theetch is timed so that the recess extends only partially through the SRBlayer. The STI regions 46 are deeper than the first recess in someembodiments. A p-doped silicon germanium layer 52 is epitaxially grownwithin the recess on the top surface of the SRB layer. The top surfaceof the SRB layer is typically pre-cleaned prior to formation of thep-doped layer 52 in accordance with conventional epitaxial pre-cleanprotocols known to the art. In some exemplary embodiments, the p-typedopant employed is boron and the doping level is 1e18 to 1e19, forexample 5e18 (5×10¹⁸ cm⁻³). The doping level allows the p-doped layer 52to function as an isolation punch through stop (PTS) layer. A SiGe:Blayer 52 can be epitaxially grown using the same tool and process usedto grow the SiGe SRB layer 44 by including diborane with precursors suchas silane and germane. The germanium content is the same throughout theSiGe:B layer in one or more embodiments. Boron or other p-type dopantmay be included throughout the p-doped silicon germanium layer 52 oronly in the top 100-300 nm thereof. The doped silicon germanium layer 52may have the same or slightly higher (1-2%) germanium content withrespect to the surface portion of the SRB layer 44 which it adjoins. Inembodiments wherein boron doping is within the range identified above,there should be very little induced strain within the SiGe:B layer 52,allowing the same germanium content as in the SRB layer 44 or just aslightly higher content (one percent or less) to be employed within thislayer. In some exemplary embodiments, the layer 52 is represented bySi_(1−y)Ge_(y):B, the SRB layer 44 has the composition Si_(1−x)Ge_(x),x=0.25, y is between 0.25 and 0.26, and the thickness of the dopedregion of the Si_(1−y)Ge_(y):B layer 52 is between 100-200 nm, and theoverall thickness of the Si_(1−y)Ge_(y):B layer 52 is between two andthree microns.

A silicon layer 54 is epitaxially grown on the Si_(1−y)Ge_(y):B layer52. The silicon layer 54 can be grown using the same tool and processused to grow the SiGe SRB layer 44 and the underlying p-doped silicongermanium layer 52. The thickness of the silicon layer 54 corresponds tothe heights of the fins to be formed in the nFET region, as describedbelow, in embodiments where finned structures are later fabricated. Thesilicon layer will be under tensile strain as the lattice structurethereof is stretched to match the larger lattice constant of theunderlying p-doped silicon germanium layer 52. The layer 52 willfunction as a punch through stop/well layer for the nFET device(s)formed in the nFET region. Subsequent to completion of the above stepsin the nFET region, a hard mask 48′ is formed on the silicon layer 54and the previously formed hard mask 48 is removed from the pFET regionto obtain the structure shown in FIG. 9. Hot phosphoric acid may be usedto remove the hard mask 48 in embodiments where a nitride hard mask isemployed.

A recess is formed in the pFET region of the SRB layer 44 while the nFETregion is protected by the hard mask 48′. The same technique used informing the recess containing the p-doped silicon germanium layer 52 andthe silicon layer 54 in the nFET region may again be employed in thepFET region. The recess(es) in the pFET region preferably does notextend deeper than the adjoining STI regions 46. The resulting structureis subjected to an epitaxial prebake at low temperature, for example750° to 850° C. for two to five minutes (2-5 min.), a pressure range of10 -100 torr, and hydrogen flow rate of 10-50 slm. The exposed surfaceof the SRB layer 44 can be cleaned using a SiCoNi™ etch, an in-situ HCletch, or any other suitable pre-clean process wherein temperatures aremaintained below about 800-850° C. Pre-cleaning is conducted for fiveminutes or less. A SiCoNi™ etch is a plasma assisted dry etch processthat involves simultaneous exposure of a substrate to hydrogen, NF₃ andNH₃ plasma by-products. An n-doped silicon layer 56, for example Si:As,is epitaxially grown at 450-750° C., a range of 550-650° beingpreferred, on the exposed surface of the recessed SRB layer 44. Arsenicis a preferred n-type dopant with respect to phosphorus due to its lowerdiffusion rate in silicon germanium. The n-doped silicon layer 56 can begrown using the same tool used to grow the p-doped silicon layer 52 andthe SRB layer using appropriate precursors, for example silane ortetrasilane with arsine or phosphine. In embodiments where tetrasilaneis employed as a precursor, epitaxial growth can take place at aboutfive hundred fifty degrees Centigrade (550° C.). The n-doped siliconlayer 56 is grown at a higher temperature range if silane is employed,for example about six hundred degrees Centigrade. In some embodiments,in situ dopants are included only in the last-deposited 100-300 nm ofthe n-doped silicon layer 56, the remainder of the layer being undoped.The n-doped silicon layer 56 will relax if grown above its criticalthickness, building a relaxed template that enables the formation of astrained silicon germanium layer and strained silicon germanium finshaving relatively low percentages of germanium compared to thoseobtained using prior art methods such as that discussed above withrespect to FIGS. 1-4. The overall thickness of the relaxed silicon layer56 is between two and three microns in some exemplary embodiments,thereby providing the relaxed template for subsequent silicon germaniumlayer growth thereon. The top 100-300 nm of the relaxed silicon layerincludes in situ arsenic doping in embodiments where punch through stop(PTS) regions are to be provided for subsequently formed pFET devices.The STI regions 46 are deeper than the p-doped SiGe layer 52 and then-doped silicon layer 56 in the exemplary embodiment. Each of theselayers 52, 56 adjoins a side of an STI region 46 which provideselectrical isolation of the layers. More reliable gate stack integrationis possible using silicon germanium fins containing, for example, 25%germanium than those containing 50% germanium. A second silicongermanium layer 58 is epitaxially grown on the n-doped silicon layer 56.The second silicon germanium layer 58 has a composition ofSi_(1−z)Ge_(z) wherein z is 0.3 or less in order to facilitate gatestack formation on subsequently fabricated fins. In some embodiments, zis between 0.2 and 0.3 and has substantially the same value as x. Thesame tool used to grow the SRB layer 44 can be employed to grow thesecond silicon germanium layer 58. The thickness of the second silicongermanium layer 58 is the same as the thickness of the silicon layer 54in some embodiments and corresponds to the desired heights of silicongermanium fins to be formed therefrom. The n-doped silicon layer 56, inaddition to providing a template for growing a strained silicongermanium layer containing 20-30% germanium, also functions as a punchthrough stop/well layer for the pFET device(s) later formed in the pFETregion. Since diffusion of the n-type dopants (arsenic or phosphorus) ismuch slower in silicon than in silicon germanium, the problems relatingto doping diffusion in the pFET region, as discussed above with respectto FIGS. 1-4, are reduced or eliminated. As discussed above, arsenicdopants are preferred over phosphorus dopants in the n-doped siliconlayer 56.

Electrically isolated arrays of parallel silicon and silicon germaniumfins 60, 62 are formed, respectively, from the silicon and silicongermanium layers 54, 58 in some embodiments. The STI regions 46 arereduced in height during processing, both intentionally andunintentionally. The fins 60, 62 are accordingly shown as extendingabove the top surfaces of the STI regions in FIG. 11. The hard mask 48′is removed from the nFET region prior to the formation of the siliconfins 60. The silicon fins 60 adjoin the p-doped silicon germanium layerand, like the silicon layer 54 described above, are under tensilestrain. The silicon germanium fins 62 adjoin the n-doped silicon layer56 and are accordingly under compressive strain. As known in the art,compressively strained channels enhance the performance of PMOS deviceswhile NMOS devices benefit from tensile strain. The process used to formthe fins depends on the desired widths of the fins 60, 62. Sidewallimage transfer allows the formation of fins having relatively smallaverage widths while conventional photolithographic techniques can beemployed for form fins having larger widths. In some embodiments, finwidths are between six and ten nanometers and are formed using sidewallimage transfer techniques.

Once the structure 70 shown in FIG. 11 has been obtained, conventionalprocesses may be followed in the fabrication of nFET and pFET devices inthe nFET and pFET regions, respectively. A low-k dielectric layer (notshown) is deposited in the trenches between the fins 60, 62, similar tothe layer 34 described above with respect to FIG. 4. Active fin heightsin some embodiments range from ten to fifty nanometers. In otherembodiments, fin heights are at least fifty nanometers. Technology forforming nFET and pFET devices is known to the art and continues to bedeveloped. The gates of FinFETs can be formed using a “gate-first”process wherein a gate stack and spacers are formed prior to selectiveepitaxial growth on the fins wherein source and drain regions areenlarged. A “gate-last” process may alternatively be employed. Gate-lastprocesses include fabricating a dummy gate, fabricating other elementsof the transistor, removing the dummy gate, and replacing the removeddummy gate with actual gate materials. In embodiments where n-typeFinFET devices are to be formed, in-situ n-doped silicon may be used toform the epitaxial source/drain structures. In-situ doping of thesource/drain structures can be conducted using conventional precursormaterials and techniques. Source/drain epitaxy to form p-dopedsource/drain regions may include the introduction of a boron precursorgas such as diborane. The p-doped source/drain structures may consistessentially of boron-doped silicon germanium in one or more exemplaryembodiments. In a silicon-containing substrate, examples of p-typedopants, i.e., impurities include but are not limited to: boron,aluminum, gallium and indium. As used herein, “n-type” refers to theaddition of impurities that contributes free electrons to an intrinsicsemiconductor. In a silicon-containing substrate, examples of n-typedopants, i.e., impurities, include but are not limited to antimony,arsenic and phosphorous. Exemplary epitaxial growth processes that aresuitable for use in forming the silicon and silicon germanium epitaxyinclude rapid thermal chemical vapor deposition (RTCVD), low-energyplasma deposition (LEPD), ultra-high vacuum chemical vapor deposition(UHVCVD), atmospheric pressure chemical vapor deposition (APCVD) andmolecular beam epitaxy (MBE). The temperature for epitaxial depositionprocesses typically ranges from 550° C. to 900° C. Boron-doped silicongermanium source/drain regions (not shown) can, for example, be grown onthe silicon germanium fins 62 in the fabrication of pFET devices.Phosphorus-doped silicon source/drain regions can be epitaxially grownon the side walls of the silicon fins 60 in the fabrication of nFETdevices.

Some of the fabrication steps that follow completion of the structure 70shown in FIG. 11 include annealing the structure at sufficiently hightemperatures and for sufficiently long durations that n-type dopants, ifpresent within a silicon germanium layer underlying the silicongermanium fins 62, would tend to diffuse upwardly into the fins 62 andlaterally into the adjoining p-well within the nFET region. As then-type dopants are instead contained within a silicon n-well underlyingthe silicon germanium fins 62, the dopant diffusion rate is greatlyreduced during subsequent thermal processing steps. Gate stacksincluding, for example, high-k gate dielectric layers and metal fillmaterials such as tungsten (W) on titanium nitride (TiN) liners, can bereliably formed on silicon germanium fins 62 as disclosed herein. Suchfins 62 have the requisite compressive strain to enhance pFETperformance without having the high germanium content characterizingsome prior art fins 33 that adversely affect reliable gate stackintegration.

FIGS. 5-11, as discussed above, depict exemplary processing steps/stagesin the fabrication of exemplary finned semiconductor structuresincluding strain relaxed buffer layers. Although the overall fabricationmethod and the structures formed thereby are entirely novel, certainindividual processing steps required to implement the method may utilizeconventional semiconductor fabrication techniques and conventionalsemiconductor fabrication tooling. These techniques and tooling willalready be familiar to one having ordinary skill in the relevant artsgiven the teachings herein. Moreover, one or more of the processingsteps and tooling used to fabricate semiconductor devices are alsodescribed in a number of readily available publications, including, forexample James D. Plummer et al., Silicon VLSI Technology: Fundamentals,Practice, and Modeling 1^(st) Edition, Prentice Hall, 2001, which ishereby incorporated by reference herein. It is emphasized that whilesome individual processing steps are set forth herein, those steps aremerely illustrative, and one skilled in the art may be familiar withseveral equally suitable alternatives that would be applicable.

Processes as disclosed above may be employed to form semiconductordevices that do not require fins. Field-effect transistors can beformed, for example, as planar devices or may have raised source/drainregions. Transistors having various configurations continue to bedeveloped and may benefit from structures as disclosed herein.

It is to be appreciated that the various layers and/or regions shown inthe accompanying figures may not be drawn to scale. Furthermore, one ormore semiconductor layers of a type commonly used in some integratedcircuit devices or other layers may not be explicitly shown in a givenfigure for ease of explanation. This does not imply that thesemiconductor layer(s) or other layer(s) not explicitly shown areomitted in the actual integrated circuit device.

Given the discussion thus far and with reference to the exemplaryembodiments, it will be appreciated that, in general terms, an exemplaryfabrication method includes obtaining a structure 40 including asubstrate 42 and a strain relaxed silicon germanium buffer layer 44 onthe substrate, forming an epitaxial silicon germanium layer 52 on afirst region of the strain relaxed buffer layer, and forming a tensilestrained layer 54 comprising silicon directly on the epitaxial silicongermanium layer. A relaxed layer 56 comprising silicon is formed on asecond region of the strain relaxed buffer layer, such as shown in FIG.10. A compressively strained silicon germanium layer 58 is formeddirectly on the relaxed layer. Some embodiments of the method furtherinclude introducing n-type dopants in at least a top region of therelaxed layer 56 and p-type dopants in at least a top region of theepitaxial silicon germanium layer 52 during formation (in situ) of thelayers 56, 52. The compressively strained silicon germanium layer 58 isformed in adjoining relation to the top region of the relaxed layer 56,which has n-type conductivity, and the tensile strained layer 54 isformed in adjoining relation to the top region of the epitaxial silicongermanium layer 54, which has p-type conductivity. It will beappreciated that dopants can be included throughout these layers 52, 56or only in the top regions thereof. In some embodiments, the relaxedlayer 56 consists essentially of silicon and the n-type dopants and theepitaxial silicon germanium layer 52 consists essentially of silicongermanium having a germanium concentration of thirty percent or less andthe p-type dopants. The method further includes electrically isolatingthe tensile strained layer 54 and the compressively strained silicongermanium layer 58. Structures providing such electrical isolation canbe formed prior to formation of the tensile strained layer and thecompressively strained silicon germanium layer. In some embodiments,shallow trench isolation regions 46 formed in the SRB layer 44 provideelectrical isolation of later-formed tensile strained and compressivelystrained layers. In some embodiments, the strain relaxed buffer layer 44has the composition Si_(1−x)Ge_(x) where x is between 0.2 and 0.3, theepitaxial silicon germanium layer 52 has the composition Si_(1−y)Ge_(y)where y is equal to or exceeds x by 0.02 or less, and the compressivelystrained silicon germanium layer 58 has the composition Si_(1−z)Ge_(z)where z is between 0.2 and 0.3. In some embodiments, both x and z equal0.25. It will be appreciated that the SRB layer 44 may be graded(stepped or continuously), having a relatively low germaniumconcentration near the substrate 42 and increasingly higher germaniumconcentration in the direction of the top surface thereof. The value xin the Si_(1−x)Ge_(x) SRB layer 44 relates to the germaniumconcentration in the region of the SRB layer that adjoins the epitaxialsilicon germanium layer 52 grown thereon. A germanium concentration ofthe compressively strained silicon germanium layer 58 between twenty andthirty percent facilitates later gate integration. The exemplary methodmay further include electrically isolating the first and second regionsof the SRB layer. FIG. 6 schematically illustrates the electricalisolation of nFET and pFET regions in the SRB layer. In someembodiments, the fabrication process includes forming first and secondrecesses extending respectively within the first and second regions ofthe strain relaxed buffer layer. The epitaxial silicon germanium layer52 is formed within the first recess, as described above with respect toFIG. 8. The relaxed layer is formed within the second recess, such asdescribed with respect to FIG. 10. The method further includes formingthe tensile strained layer within the first recess and the compressivelystrained silicon germanium layer within the second recess in someembodiments such that the tensile strained layer 54 and thecompressively strained silicon germanium layer 58 are electricallyisolated. A first array of parallel fins 60 is formed from the tensilestrained layer 54 and a second array of parallel fins 62 is formed fromthe compressively strained silicon germanium layer 58 in someembodiments. The first array of fins is electrically isolated from thesecond array. The method may further include forming one or more nFETdevices using the first array of parallel fins 60 and one or more pFETdevices using the second array of parallel fins 62. The first and secondarrays of parallel fins are formed in some embodiments such that theepitaxial silicon germanium layer 52 is functional as a punch throughstop for the one or more nFET devices and the relaxed layer 56 isfunctional as a punch through stop for the one or more pFET devices. Therelaxed layer 56 may consist essentially of silicon and may be formed byepitaxially growing the relaxed layer to a thickness wherein it relaxesto the lattice constant of silicon. It thereby forms a template forgrowing the strained silicon germanium layer thereon. The incorporationof n-type dopants such as arsenic, preferably in situ as opposed toimplantation, allows the relaxed layer 56 to additionally function as apunch through stop for a subsequently formed pFET device. In someembodiments, the substrate 42 consists essentially of monocrystallinesilicon and the strain relaxed buffer layer consists essentially ofsilicon and germanium. The substrate 42 is a bulk silicon wafer in someembodiments.

It will also be appreciated that an exemplary semiconductor structure isprovided that includes a strain relaxed silicon germanium buffer layer44, a p-doped silicon germanium layer 52 on a first region of the strainrelaxed buffer layer, and a relaxed, n-doped layer 56 comprising siliconon a second region of the strain relaxed buffer layer. A tensilestrained layer 54 comprising silicon is in direct contact with thep-doped silicon germanium layer. A compressively strained silicongermanium layer 58 directly contacts the relaxed, n-doped layer 56 andis electrically isolated from the tensile strained layer 54. Exemplarysemiconductor structures are schematically illustrated in FIGS. 10 and11. The strain relaxed buffer layer has the composition Si_(1−x)Ge_(x)where x is between 0.2 and 0.3 and the compressively strained silicongermanium layer has the composition Si_(1−z)Ge_(z) where z is between0.2 and 0.3. The p-doped silicon germanium layer may have thecomposition Si_(1−y)Ge_(y) wherein y is equal to or exceeds x by 0.02 orless. In some exemplary embodiments, the n-doped layer 56 consistsessentially of silicon and includes n-type dopants in at least a regionof the n-doped layer that adjoins the compressively strained silicongermanium layer 58. The tensile strained layer 54 in some embodimentsincludes a first array of parallel silicon fins 60 and the compressivelystrained silicon germanium layer comprises a second array of parallelsilicon germanium fins 62. The first array of fins is electricallyisolated from the second array in embodiments of the semiconductorstructure that include fins. FIG. 11 shows an exemplary semiconductorstructure 70 including electrically isolated arrays of fins. The p-dopedsilicon germanium layer 52 is configured as a first punch through stopfor the first array of parallel silicon fins 60 and the relaxed, n-dopedlayer 56 is configured as a second punch through stop for the secondarray of parallel silicon germanium fins 58. In some embodiments, thetensile strained semiconductor layer 54 consists essentially of silicon,the compressively strained semiconductor layer 58 consists essentiallyof silicon germanium, and z is substantially equal to x. A shallowtrench isolation region 46 may be used for electrically isolating thefirst array of parallel silicon fins 60 from the second array ofparallel silicon germanium fins 62. The p-doped silicon germanium layer52 adjoins a first side of the shallow trench isolation region and then-doped, silicon-containing layer 56 adjoins a second side of theshallow trench isolation region.

At least a portion of the techniques described above may be implementedin an integrated circuit. In forming integrated circuits, identical diesare typically fabricated in a repeated pattern on a surface of asemiconductor wafer. Each die includes a device described herein, andmay include other structures and/or circuits. The individual dies arecut or diced from the wafer, then packaged as an integrated circuit. Oneskilled in the art would know how to dice wafers and package die toproduce integrated circuits.

Those skilled in the art will appreciate that the exemplary structuresdiscussed above can be distributed in raw form (i.e., a single waferhaving multiple unpackaged chips), as bare dies, in packaged form, orincorporated as parts of intermediate products or end products thatbenefit from having electronic devices and associated structures formedin accordance with one or more of the exemplary embodiments.

The illustrations of embodiments described herein are intended toprovide a general understanding of the various embodiments, and they arenot intended to serve as a complete description of all the elements andfeatures of apparatus and systems that might make use of the circuitsand techniques described herein. Many other embodiments will becomeapparent to those skilled in the art given the teachings herein; otherembodiments are utilized and derived therefrom, such that structural andlogical substitutions and changes can be made without departing from thescope of this disclosure. It should also be noted that, in somealternative implementations, some of the steps of the exemplary methodsmay occur out of the order noted in the figures. For example, two stepsshown in succession may, in fact, be executed substantiallyconcurrently, or certain steps may sometimes be executed in the reverseorder, depending upon the functionality involved. The drawings are alsomerely representational and are not drawn to scale. Accordingly, thespecification and drawings are to be regarded in an illustrative ratherthan a restrictive sense.

Embodiments are referred to herein, individually and/or collectively, bythe term “embodiment” merely for convenience and without intending tolimit the scope of this application to any single embodiment orinventive concept if more than one is, in fact, shown. Thus, althoughspecific embodiments have been illustrated and described herein, itshould be understood that an arrangement achieving the same purpose canbe substituted for the specific embodiment(s) shown; that is, thisdisclosure is intended to cover any and all adaptations or variations ofvarious embodiments. Combinations of the above embodiments, and otherembodiments not specifically described herein, will become apparent tothose of skill in the art given the teachings herein.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting. As used herein, thesingular forms “a,” “an” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. It willbe further understood that the terms “comprises” and/or “comprising,”when used in this specification, specify the presence of statedfeatures, steps, operations, elements, and/or components, but do notpreclude the presence or addition of one or more other features, steps,operations, elements, components, and/or groups thereof. Terms such as“above” and “below” are used to indicate relative positioning ofelements or structures to each other as opposed to relative elevation.

The corresponding structures, materials, acts, and equivalents of anymeans or step-plus-function elements in the claims below are intended toinclude any structure, material, or act for performing the function incombination with other claimed elements as specifically claimed. Thedescription of the various embodiments has been presented for purposesof illustration and description, but is not intended to be exhaustive orlimited to the forms disclosed. Many modifications and variations willbe apparent to those of ordinary skill in the art without departing fromthe scope and spirit thereof. The embodiments were chosen and describedin order to best explain principles and practical applications, and toenable others of ordinary skill in the art to understand the variousembodiments with various modifications as are suited to the particularuse contemplated.

The abstract is provided to comply with 37 C.F.R. §1.72(b), whichrequires an abstract that will allow the reader to quickly ascertain thenature of the technical disclosure. It is submitted with theunderstanding that it will not be used to interpret or limit the scopeor meaning of the claims. In addition, in the foregoing DetailedDescription, it can be seen that various features are grouped togetherin a single embodiment for the purpose of streamlining the disclosure.This method of disclosure is not to be interpreted as reflecting anintention that the claimed embodiments require more features than areexpressly recited in each claim. Rather, as the appended claims reflect,the claimed subject matter may lie in less than all features of a singleembodiment. Thus the following claims are hereby incorporated into theDetailed Description, with each claim standing on its own as separatelyclaimed subject matter.

Given the teachings provided herein, one of ordinary skill in the artwill be able to contemplate other implementations and applications ofthe techniques and disclosed embodiments. Although illustrativeembodiments have been described herein with reference to theaccompanying drawings, it is to be understood that illustrativeembodiments are not limited to those precise embodiments, and thatvarious other changes and modifications are made therein by one skilledin the art without departing from the scope of the appended claims.

1. A fabrication method comprising: obtaining a structure including asubstrate and a strain relaxed silicon germanium buffer layer on thesubstrate; forming an epitaxial silicon germanium layer on a firstregion of the strain relaxed buffer layer, the epitaxial silicongermanium layer comprising dopants of a first conductivity type; forminga tensile strained layer comprising silicon directly on the epitaxialsilicon germanium layer; forming an epitaxial relaxed layer comprisingsilicon on a second region of the strain relaxed buffer layer, therelaxed layer comprising dopants of a second conductivity type oppositein polarity to the first conductivity type; and forming a compressivelystrained silicon germanium layer directly on the relaxed layer.
 2. Themethod of claim 1, wherein forming the relaxed layer further includesintroducing in situ n-type dopants in at least a top region thereof,forming the epitaxial silicon germanium layer further includesintroducing in situ p-type dopants in at least a top region thereof, thecompressively strained silicon germanium layer being formed in adjoiningrelation to the top region of the relaxed layer, and the tensilestrained layer being formed in adjoining relation to the top region ofthe epitaxial silicon germanium layer.
 3. The method of claim 2, whereinthe relaxed layer consists essentially of silicon and the n-type dopantsand the epitaxial silicon germanium layer consists essentially ofsilicon germanium having a germanium concentration of thirty percent orless and the p-type dopants, further including electrically isolatingthe tensile strained layer and the compressively strained silicongermanium layer.
 4. The method of claim 1, wherein the strain relaxedbuffer layer has at least a top region having the compositionSi_(1−x)Ge_(x) where x is between 0.2 and 0.3, the epitaxial silicongermanium layer has the composition Si_(1−y)Ge_(y) where y is equal toor exceeds x by 0.02 or less, and the compressively strained silicongermanium layer has the composition Si_(1−z)Ge_(z) where z is between0.2 and 0.3.
 5. The method of claim 4, further including electricallyisolating the first and second regions, forming first and secondrecesses extending respectively within the first and second regions ofthe strain relaxed silicon germanium buffer layer, forming the epitaxialsilicon germanium layer within the first recess, and forming the relaxedlayer within the second recess.
 6. A fabrication method comprising:obtaining a structure including a substrate and a strain relaxed silicongermanium buffer layer on the substrate; forming an epitaxial silicongermanium layer on a first region of the strain relaxed buffer layer;forming a tensile strained layer comprising silicon directly on theepitaxial silicon germanium layer; forming a relaxed layer comprisingsilicon on a second region of the strain relaxed buffer layer; forming acompressively strained silicon germanium layer directly on the relaxedlayer; electrically isolating the first and second regions; formingfirst and second recesses extending respectively within the first andsecond regions of the strain relaxed silicon germanium buffer layer, theepitaxial silicon germanium layer being formed within the first recessand the relaxed layer being formed within the second recess; and formingthe tensile strained layer within the first recess and the compressivelystrained silicon germanium layer within the second recess such that thetensile strained layer and the compressively strained silicon germaniumlayer are electrically isolated.
 7. The method of claim 6, whereinforming the relaxed layer further includes introducing in situ n-typedopants in at least a top region thereof, forming the epitaxial silicongermanium layer further includes introducing in situ p-type dopants inat least a top region thereof, further including forming a first arrayof parallel fins from the tensile strained layer and a second array ofparallel fins from the compressively strained silicon germanium layersuch that the first array is electrically isolated from the secondarray.
 8. The method of claim 7, further including forming one or morenFET devices using the first array of parallel fins and one or more pFETdevices using the second array of parallel fins, the first and secondarrays of parallel fins being formed such that the epitaxial silicongermanium layer is functional as a punch through stop for the one ormore nFET devices and the relaxed layer is functional as a punch throughstop for the one or more pFET devices.
 9. The method of claim 8, whereinthe relaxed layer consists essentially of silicon and the n-typedopants, wherein forming the relaxed layer further includes epitaxiallygrowing the relaxed layer to a thickness wherein it relaxes to thelattice constant of silicon.
 10. The method of claim 9, wherein formingthe compressively strained silicon germanium layer further includesproviding substantially the same concentration of germanium in thecompressively strained silicon germanium layer as in the strain relaxedsilicon germanium buffer layer.
 11. The method of claim 9, wherein thesubstrate consists essentially of monocrystalline silicon and the strainrelaxed silicon germanium buffer layer consists essentially of siliconand germanium.
 12. The method of claim 9, wherein electrically isolatingthe first and second regions further includes forming a shallow trenchisolation region of a first depth within the strain relaxed silicongermanium buffer layer.
 13. The method of claim 12, further includingforming the first and second recesses within the strain relaxed silicongermanium buffer layer to depths that are shallower than the firstdepth. 14.-20. (canceled)